Method for determining an etch profile of a layer of a wafer for a simulation system
US11568123B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2021 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Jan 25, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for determining an etch profile is described. The method includes determining a masking layer profile. Loading information can be determined. The loading information indicates dependence of an etch rate for the masking layer profile on a quantity and pattern of material being etched. Flux information can be determined. The flux information indicates dependence of the etch rate on an intensity and a spread angle of radiation incident on the masking layer profile. Re-deposition information can be determined. The re-deposition information indicates dependence of the etch rate on an amount of material removed from the masking layer profile that is re-deposited back on the masking layer profile. An output etch profile for the layer of the wafer is determined based on the loading information, the flux information, and/or the re-deposition information.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.