Substrate processing apparatus, signal source device, method of processing material layer, and method of fabricating semiconductor device
US11569065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | May 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.