Patent · US Active

Semiconductor device including elongated bonding structure between the substrate

US11569188B2 · kind B2 · utility

0Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 28, 2021
Grant dateJan 31, 2023
Priority date
Expiry dateJul 28, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/08145
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device, including a first semiconductor substrate and a second semiconductor substrate, is provided. A first bonding structure is located on the first semiconductor substrate and includes a first pad having an elongated shape. A second bonding structure is located on the second semiconductor substrate and includes a second pad having an elongated shape. The first semiconductor substrate is bonded to the second semiconductor substrate by bonding the first bonding structure and the second bonding structure. The first pad is bonded to the second pad, and an extension direction of the first pad is different from an extension direction of the second pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.