Method of manufacturing semiconductor light emitting device
US11569417B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2022 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Apr 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.