RF switch stack with charge control elements
US11569812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Jun 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.