Method for manufacturing an etch stop layer and MEMS sensor comprising an etch stop layer
US11572271B2 · kind B2 · utility
0Cited by
6References
14Claims
0Family size
Assignee
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Key dates
| Filing date | May 8, 2019 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | May 8, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The disclosure relates to a method for manufacturing a planarized etch-stop layer, ESL, for a hydrofluoric acid, HF, vapor phase etching process. The method includes providing a first planarized layer on top of a surface of a substrate, the first planarized layer having a patterned and structured metallic material and a filling material. The method further includes depositing on top of the first planarized layer the planarized ESL of an ESL material with low HF etch rate, wherein the planarized ESL has a low surface roughness and a thickness of less than 150 nm, in particular of less than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.