Photoacoustic sensors and MEMS devices

US11573204B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rainer Markus Schaller · Kelheim, DE
• Jochen Dangelmaier · Beratzhausen, DE
• Matthias Eberl · Schweinhub, DE
• Simon Gassner · Munich, DE
• Franz Jost · Stuttgart, DE
• Stefan Kolb · Unterschleißheim, DE
• Horst Theuss · Wenzenbach, DE

Key dates

• Filing date: Dec 9, 2020
• Grant date: Feb 7, 2023
• Expiry date: Jan 28, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N2291/021
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.