Patent · US Active

Data latch circuit and semiconductor memory device

US11574663B2 · kind B2 · utility

0Cited by
5References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 2, 2020
Grant dateFeb 7, 2023
Priority date
Expiry dateMar 6, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/0483
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A data latch circuit includes a first n-channel transistor and a first p-channel transistor. A gate of the first n-channel transistor and a gate of the first p-channel transistor are a common gate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.