Atomic layer etching

US11574813B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Charles Dezelah · Helsinki, FI
• Varun Sharma · Helsinki, FI

Key dates

• Filing date: Dec 7, 2020
• Grant date: Feb 7, 2023
• Expiry date: Dec 7, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/32009
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.