Semiconductor device and method for manufacturing the same
US11574819B2 · kind B2 · utility
0Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2021 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Aug 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.