Monolithic multi-I region diode switches
US11574906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Feb 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/76
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A number of monolithic multi-throw diode switch structures are described. The monolithic multi-throw diode switches can include a hybrid arrangement of diodes with different intrinsic regions, all formed over the same semiconductor substrate. In one example, two PIN diodes in a monolithic multi-throw diode switch have different intrinsic region thicknesses. The first PIN diode has a thinner intrinsic region, and the second PIN diode has a thicker intrinsic region. This configuration allows for both the thin intrinsic region PIN diode and the thick intrinsic region PIN diode to be individually optimized. As one example, for a switch functioning in a dedicated transmit/receive mode, the first transmit PIN diode can have a thicker intrinsic region than the second receive PIN diode to maximize power handling for the transmit arm and maximize receive sensitivity and insertion loss in the receive arm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.