Asymmetrical semiconductor nanowire field-effect transistor
US11575005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Nov 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An integrated circuit structure includes: a semiconductor nanowire extending in a length direction and including a body portion; a gate dielectric surrounding the body portion; a gate electrode insulated from the body portion by the gate dielectric; a semiconductor source portion adjacent to a first side of the body portion; and a semiconductor drain portion adjacent to a second side of the body portion opposite the first side, the narrowest dimension of the second side of the body portion being smaller than the narrowest dimension of the first side. In an embodiment, the nanowire has a conical tapering. In an embodiment, the gate electrode extends along the body portion in the length direction to the source portion, but not to the drain portion. In an embodiment, the drain portion at the second side of the body portion has a lower dopant concentration than the source portion at the first side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.