Patent · US Active

Low standby power with fast turn on method for non-volatile memory devices

US11581029B2 · kind B2 · utility

0Cited by

13References

16Claims

0Family size

Assignee

LONGITUDE FLASH MEMORY SOLUTIONS LTD. · IE

Inventors

Cristinel Zonte · Colorado Springs, US
Vijay Raghavan · Colorado Springs, US
Iulian C. Gradinariu · Colorado Springs, US
Gary Peter Moscaluk · Colorado Springs, US
Roger Bettman · Los Altos, US
Vineet Argrawal · San Jose, US
Samuel Leshner · Los Gatos, US

Key dates

Filing date	Apr 30, 2021
Grant date	Feb 14, 2023
Priority date	—
Expiry date	Apr 30, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/32
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Systems and methods for driving a non-volatile memory device in a standby operating condition are disclosed. A standby detection circuit detects whether the non-volatile memory system is in a standby condition. In response to determining that the non-volatile memory system is in a standby condition, a bias control circuit provides bias currents to drivers of the non-volatile memory system in a standby mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.