Patent · US Active

Wafer drying system

US11581199B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 24, 2019
Grant dateFeb 14, 2023
Priority date
Expiry dateAug 18, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67253
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A wafer drying method that detects molecular contaminants in a drying gas as a feedback parameter for a multiple wafer drying process is disclosed. For example, the method includes dispensing, in a wafer drying module, a drying gas over a batch of wafers. Further, the method includes collecting the drying gas from an exhaust of the wafer drying module and determining the concentration of contaminants in the drying gas. The method also includes re-dispensing the drying gas over the batch of wafers if the concentration of contaminants is greater than a baseline value and transferring the batch of wafers out of the wafer drying module if the concentration is equal to or less than the baseline value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.