Packaged semiconductor device and method of forming thereof
US11581281B2 · kind B2 · utility
5Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Apr 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first die, a second die on the first die, and a third die on the second die, the second die being interposed between the first die and the third die. The first die includes a first substrate and a first interconnect structure on an active side of the first substrate. The second die includes a second substrate, a second interconnect structure on a backside of the second substrate, and a power distribution network (PDN) structure on the second interconnect structure such that the second interconnect structure is interposed between the PDN structure and the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.