Semiconductor device
US11581311B2 · kind B2 · utility
0Cited by
10References
20Claims
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Assignee
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Key dates
| Filing date | Jan 29, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | May 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.