Semiconductor device
US11581367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.