Capacitive pressure with Ti electrode
US11585711B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2019 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.