Jörg Siegert
9Patents
1h-index
15Co-inventors
44Inventor score
Filing activity: Aug 9, 2011 → Sep 30, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11585711B2 | Capacitive pressure with Ti electrode | Physics | 1 | Active |
| US11248976B2 | Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge | Physics | 0 | Active |
| US11946822B2 | Semiconductor transducer device with multilayer diaphragm and method of manufacturing a semiconductor transducer device with multilayer diaphragm | Performing Operations; Transporting | 0 | Active |
| US11764109B2 | Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via | Electricity | 0 | Active |
| US8884442B2 | Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact | Electricity | 0 | Active |
| US12191402B2 | Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm | Electricity | 0 | Active |
| US11878906B2 | Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device | Performing Operations; Transporting | 0 | Active |
| US11492251B2 | Method for manufacturing an integrated MEMS transducer device and integrated MEMS transducer device | Performing Operations; Transporting | 0 | Active |
| US9105645B2 | Method for producing thin semiconductor components | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.