Method to achieve tilted patterning with a through resist thickness
US11586112B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2018 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jun 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. In an embodiment, the lithographic patterning system includes an actinic radiation source, a stage where a major surface of the stage is for supporting a substrate with a resist layer, and a first prism over the stage, where the first prism comprises a first face that is substantially parallel to the major surface of the stage. In an embodiment, the lithographic patterning system further comprises a second prism, where the second prism comprises a first surface that is substantially parallel to a second surface of the first prism, and where a second surface of the second prism has a reflective coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.