Semiconductor device structure having fuse elements
US11587632B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Dec 6, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/027
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a plurality of fuse elements, a reference resistor unit, a first conductive terminal, a first switching circuit, and a second switching circuit. Each of the plurality of fuse elements has a first terminal and a second terminal. The reference resistor unit is configured to receive a first power signal and electrically couple with the first terminal of each of the plurality of fuse elements. The first conductive terminal is configured to receive a second power signal and is electrically connected to the second terminal of each of the plurality of fuse elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.