Smooth titanium nitride layers and methods of forming the same
US11587784B2 · kind B2 · utility
1Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2019 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Jan 11, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.