Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species
US11587826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Mar 5, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0192
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity includes forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which the cavity is buried, and separating the packaging by fracturing along the embrittlement plane. The separating causes a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. The method also includes, prior to making the packaging, implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, diffusing the species into the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.