Inventor · Grenoble, FR

Frédéric Mazen

23Patents

4h-index

31Co-inventors

59Inventor score

Filing activity: Nov 19, 2003 → Nov 18, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US6946369B2	Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material	Emerging Cross-Sectional Technologies	6	Expired
US9698289B2	Detachment of a self-supporting layer of silicon <100>	Emerging Cross-Sectional Technologies	4	Active
US9427948B2	Manufacturing a flexible structure by transfers of layers	Emerging Cross-Sectional Technologies	4	Active
US9246006B2	Recrystallization of source and drain blocks from above	Electricity	4	Active
US9966453B2	Method for doping source and drain regions of a transistor by means of selective amorphisation	Electricity	2	Active
US9343375B2	Method for manufacturing a transistor in which the strain applied to the channel is increased	Electricity	2	Active
US8293620B2	Method of making multiple implantations in a substrate	Electricity	2	Active
US8778775B2	Method for preparing thin GaN layers by implantation and recycling of a starting substrate	Electricity	2	Active
US9761607B2	Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate	Electricity	2	Active
US9105688B2	Process for forming a crack in a material	Electricity	1	Active
US7943402B2	Ion implantation process characterization method	Electricity	1	Active
US9201023B2	System for measuring a spacing zone in a substrate	Physics	1	Active
US11195711B2	Healing method before transfer of a semiconducting layer	Electricity	1	Active
US10950491B2	Method for transferring a useful layer	Performing Operations; Transporting	0	Active
US11769687B2	Method for layer transfer with localised reduction of a capacity to initiate a fracture	Electricity	0	Active
US12002697B2	Method for detecting the splitting of a substrate weakened by implanting atomic species	Electricity	0	Active
US11587826B2	Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species	Performing Operations; Transporting	0	Active
US11189519B2	Masking a zone at the edge of a donor substrate during an ion implantation step	Electricity	0	Active
US11670540B2	Substrates including useful layers	Performing Operations; Transporting	0	Active
US11056340B2	Direct bonding process	Electricity	0	Active
US12327719B2	Semiconductor substrate polishing method	Electricity	0	Active
US7736919B2	Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained	Emerging Cross-Sectional Technologies	0	Expired
US9589830B2	Method for transferring a useful layer	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.