Fin field-effect transistor and method of forming the same

US11588041B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Jian-Jou Lian · Tainan, TW
• Tzu-Ang Chiang · Sanjiaopu, TW
• Ming-Hsi Yeh · Hsinchu, TW
• Chun-Neng Lin · Hsinchu, TW
• Po-Yuan Wang · Hsinchu, TW
• Chieh-Wei Chen · Taichung, TW

Key dates

• Filing date: Oct 14, 2020
• Grant date: Feb 21, 2023
• Expiry date: Nov 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method for manufacturing a semiconductor device includes forming a gate trench over a semiconductor fin, the gate trench including an upper portion and a lower portion. The method includes sequentially forming one or more work function layers, a capping layer, and a glue layer over the gate trench. The glue layer includes a first sub-layer and a second sub-layer that have respective different etching rates with respect to an etching solution. The method includes removing the second sub-layer while leaving a first portion of the first sub-layer filled in the lower portion of the gate trench.