Method and system for producing silicon carbide ingot
US11591711B2 · kind B2 · utility
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2References
11Claims
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Key dates
| Filing date | Nov 3, 2020 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | May 5, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide ingot producing method is provided. The method produces a silicon carbide ingot in which an internal space of a reactor is depressurized and heated to create a predetermined difference in temperature between upper and lower portions of the internal space. The method produces a silicon carbide ingot in which a plane of a seed crystal corresponding to the rear surface of the silicon carbide ingot is lost minimally. Additionally, the method produces a silicon carbide ingot with few defects and good crystal quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.