EUV photo masks and manufacturing method thereof
US11592737B2 · kind B2 · utility
0Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2020 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Dec 19, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.