Patent · US Active

Nonvolatile memory device and storage device including the nonvolatile memory device

US11594287B2 · kind B2 · utility

1Cited by
6References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 11, 2021
Grant dateFeb 28, 2023
Priority date
Expiry dateMar 11, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06506
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A nonvolatile memory device includes a first memory chip and a second memory chip connected to a controller through the same channel. The first memory chip generates a first signal from a first internal clock signal based on a clock signal received from the controller. The second memory chip generates a second signal from a second internal clock signal based on the clock signal, and performs a phase calibration operation on the second signal on the basis of a phase of the first signal by delaying the second internal clock signal based on a phase difference between the first and second signals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.