Inventor · Hwaseong-si, KR

Youngmin Jo

18Patents
1h-index
20Co-inventors
43Inventor score

Filing activity: Apr 21, 2020 → Oct 31, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US11115021B2 Impedance calibration circuit and memory device including the same Physics 2 Active
US11594287B2 Nonvolatile memory device and storage device including the nonvolatile memory device Electricity 1 Active
US11502687B2 Impedance calibration circuit and memory device including the same Physics 0 Active
US12394460B2 Nonvolatile memory device and memory system including the same Physics 0 Active
US11289150B2 Memory system and operating method of the same Physics 0 Active
US11163453B2 Memory device, memory system including memory device and vehicle-based system including memory system Emerging Cross-Sectional Technologies 0 Active
US12237046B2 Memory system including an interface circuit connecting a controller and memory Physics 0 Active
US12431173B2 Memory package performing training operation using address-delay mapping and memory system including the same Physics 0 Active
US11736098B2 Memory package, semiconductor device, and storage device Electricity 0 Active
US11756592B2 Memory device supporting DBI interface and operating method of memory device Physics 0 Active
US11157425B2 Memory device, memory system including memory device and vehicle-based system including memory system Emerging Cross-Sectional Technologies 0 Active
US11810638B2 Memory device including multiple memory chips and data signal lines and a method of operating the memory device Electricity 0 Active
US11567879B2 Method of encrypting data in nonvolatile memory device, nonvolatile memory device and user device Electricity 0 Active
US12394452B2 ZQ calibration circuit for multiple interfaces Physics 0 Active
US11309033B2 Memory device Electricity 0 Active
US11984170B2 Nonvolatile memory device and storage device including the nonvolatile memory device Electricity 0 Active
US12210773B2 Storage device for transmitting data having an embedded command in both directions of a shared channel, and a method of operating the storage device Electricity 0 Active
US12073917B2 Memory device that includes a duty correction circuit, memory controller that includes a duty sensing circuit, and storage device that includes a memory device Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.