Apparatus and method for plasma processing
US11594398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.