Method of manufacturing a bonded substrate stack
US11594515B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Nov 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a bonded substrate stack includes: providing a first substrate having a first hybrid interface layer, the first hybrid interface layer including a first insulator and a first metal; and providing a second substrate having a second hybrid interface layer, the second hybrid interface layer including a second insulator and a second metal. The hybrid interface layers are surface-activated by particle bombardment which is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the hybrid interface layers. The surface-activated hybrid interface layers are brought into contact, such that the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer bond together to form first insulator to second insulator bonds and first metal to second metal bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.