Remanent polarizable capacitive structure, memory cell, and methods thereof

US11594542B2 · kind B2 · utility

Assignee

• Ferroelectric Memory GmbH · DE

Inventor

• Patrick Polakowski · Dresden, DE

Key dates

• Filing date: Oct 16, 2020
• Grant date: Feb 28, 2023
• Expiry date: Jun 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/689
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

According to various aspects, a method of forming one or more remanent-polarizable capacitive structures, the method including forming one or more capacitive structures, each of the one or more capacitive structures includes: one or more electrodes, one or more precursor structures disposed adjacent to the one or more electrodes, wherein each of the one or more precursor structures has a first dimension in a range from about 1 nm to 100 nm and a second dimension in a range from about 1 nm to about 30 nm; and, subsequently, forming one or more remanent-polarizable structures comprising a crystalline remanent-polarizable material based on a crystallization of a precursor material of the one or more precursor structures.