Semiconductor devices with string select channel for improved upper connection
US11594544B2 · kind B2 · utility
3Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2020 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Jan 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
A semiconductor device includes; gate layers stacked on a substrate, a channel layer extending through the gate layers, a string select gate layer disposed on the channel layer and a string select channel layer extending through the string select gate layer to contact the channel layer. The string select channel layer includes a first portion below the string select gate layer including a first protruding region, a second portion extending through the string select gate layer, and a third portion above the string select gate layer including a second protruding region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.