Image sensor and method of fabricating thereof
US11594577B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Nov 5, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Nov 5, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.