LDMOS transistor and manufacture thereof

US11594631B2 · kind B2 · utility

Assignee

• SiEn (QingDao) Integrated Circuits Co., Ltd. · CN

Inventors

• Min Li · Qingdao, CN
• Min-hwa Chi · Palo Alto, US
• Richard Ru-Gin Chang · Qingdao, CN

Key dates

• Filing date: Jun 18, 2021
• Grant date: Feb 28, 2023
• Expiry date: Jul 3, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

The present application provides a laterally diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof. The transistor comprising: a semiconductor substrate having a doping region, wherein the doping region comprises a first well region and a second well region with opposite doping types; a source region, a drain region, a shallow trench isolation (STI) structure comprising a laminated structure having an alternate layers of insulating material and ferroelectric material, a gate, a contact hole, and a metal layer. The LDMOS transistor simultaneously increases breakdown voltage (BV) and reduces on-resistance (Ron).