Inventor · Qingdao, CN

Min Li

7Patents
0h-index
10Co-inventors
42Inventor score

Filing activity: Aug 18, 2000 → Nov 20, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US11862674B2 High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material and method of making the same Electricity 0 Active
US11594631B2 LDMOS transistor and manufacture thereof Electricity 0 Active
US11462640B2 LDMOS transistor having vertical floating field plate and manufacture thereof Electricity 0 Active
US12083501B2 FCC catalyst prepared by a process involving more than one silica material Emerging Cross-Sectional Technologies 0 Active
US12148793B2 High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material Electricity 0 Active
US11458456B2 FCC catalyst prepared by a process involving more than one silica material Emerging Cross-Sectional Technologies 0 Active
US6413785B1 Solid phase synthesis of 1-aminohydantoins Chemistry; Metallurgy 0 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.