Saw resonator comprising layers for attenuating parasitic waves
US11595021B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Apr 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.