Patent · US Active

SiC member

US11597655B2 · kind B2 · utility

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4Claims
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Assignee

Inventor

Key dates

Filing dateApr 24, 2019
Grant dateMar 7, 2023
Priority date—
Expiry dateMar 11, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68785
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.