Wafer support and thin-film deposition apparatus using the same
US11598006B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2021 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Jul 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3435
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.