Analyzing a buried layer of a sample
US11598633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2021 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Oct 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Analyzing a buried layer on a sample includes milling a spot on the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along a sidewall of the spot. From a first perspective a first distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. From a second perspective a second distance is measured between the first point on the sidewall corresponding to the upper surface of the buried layer and the second point on the sidewall corresponding to the lower surface of the buried layer. A thickness of the buried layer is determined using the first distance and the second distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.