Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
US11600492B2 · kind B2 · utility
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54References
20Claims
0Family size
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Key dates
| Filing date | Dec 10, 2019 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Jul 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrostatic chucks with reduced current leakage and methods of dicing semiconductor wafers are described. In an example, an etch apparatus includes a chamber, and a plasma source within or coupled to the chamber. An electrostatic chuck is within the chamber. The electrostatic chuck includes a conductive pedestal having a plurality of notches at a circumferential edge thereof. The electrostatic chuck also includes a plurality of lift pins corresponding to ones of the plurality of notches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.