Local contacts of three-dimensional memory devices and methods for forming the same
US11600633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2020 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Apr 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The slit structure includes a contact including a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion. An upper end of the second contact portion of the slit structure is flush with an upper end of the channel local contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.