Memory devices and methods of forming memory devices
US11600664B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2020 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Jul 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A memory device may be provided, including a substrate; one or more bottom electrodes arranged over the substrate; one or more switching layers arranged over the one or more bottom electrodes; and a plurality of top electrodes arranged over the one or more switching layers. Each of the one or more bottom electrodes may include at least one corner tip facing the switching layer, and an angle of each of the at least one corner tip may be less than ninety degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.