Dielectric fins with air gap and backside self-aligned contact
US11600695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2020 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Mar 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a structure having two fins extending from a substrate and an isolation structure adjacent to lower portions of the fins; forming a cladding layer over the isolation structure and over top and sidewalls of the fins; recessing the isolation structure using the cladding layer as an etch mask to expose the substrate; after the recessing of the isolation structure, depositing a seal layer over the substrate, the isolation structure, and the cladding layer; forming a sacrificial plug over the seal layer and between the two fins; and depositing a dielectric top cover over the sacrificial plug and laterally between the two fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.