Inventor

Ming-Lung Cheng

24Patents
4h-index
28Co-inventors
59Inventor score

Filing activity: May 14, 2010 → Jun 19, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8729627B2 Strained channel integrated circuit devices Electricity 558 Active
US9768277B2 Method and apparatus of forming an integrated circuit with a strained channel region Electricity 8 Active
US8357579B2 Methods of forming integrated circuits Electricity 7 Active
US9105664B2 Method for enhancing channel strain Electricity 5 Active
US10522417B2 FinFET device with different liners for PFET and NFET and method of fabricating thereof Electricity 3 Active
US11217679B2 Semiconductor device and method Electricity 1 Active
US12154946B2 Semiconductor device structure Electricity 1 Active
US12389653B2 Semiconductor devices and methods of fabricating the same Electricity 0 Active
US11600695B2 Dielectric fins with air gap and backside self-aligned contact Electricity 0 Active
US11688767B2 Semiconductor device structure and method for forming the same Electricity 0 Active
US8951875B2 Semiconductor structure Electricity 0 Active
US11810827B2 FinFET device with different liners for PFET and NFET and method of fabricating thereof Electricity 0 Active
US12012297B2 Avoidance conveying device and method for glass production line Emerging Cross-Sectional Technologies 0 Active
US12278276B2 Multi-channel devices and method with anti-punch through process Electricity 0 Active
US12414331B2 Isolation for multigate devices Electricity 0 Active
US12191370B2 Semiconductor device with tunable channel layer usage and methods of fabrication thereof Electricity 0 Active
US11837631B2 Source/drain spacer with air gap in semiconductor devices and methods of fabricating the same Performing Operations; Transporting 0 Active
US11031299B2 FinFET device with different liners for PFET and NFET and method of fabricating thereof Electricity 0 Active
US12142668B2 Semiconductor device and method Electricity 0 Active
US12396234B2 Method for forming semiconductor device structure with a cap layer Electricity 0 Active
US12324218B2 Semiconductor devices with air gaps and the method thereof Electricity 0 Active
US11688768B2 Integrated circuit structure with source/drain spacers Electricity 0 Active
US11505489B2 Isothermal drop speed cooling method of forced convection area for lehr and the apparatus thereof Chemistry; Metallurgy 0 Active
US12166071B2 Dielectric fins with air gap and backside self-aligned contact Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.