Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same
US11600712B2 · kind B2 · utility
1Cited by
2References
15Claims
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Key dates
| Filing date | Nov 22, 2019 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.