Transistor device and method of fabricating a gate of a transistor device

US11600723B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ingmar Neumann · Villach, AT
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Roland Moennich · Klagenfurt, AT
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Feb 1, 2021
• Grant date: Mar 7, 2023
• Expiry date: Mar 19, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

In an embodiment, a transistor device includes a semiconductor substrate having a main surface, a cell field including a plurality of transistor cells, and an edge termination region laterally surrounding the cell field. The cell field includes a gate trench in the main surface of the semiconductor substrate, a gate dielectric lining the gate trench, a metal gate electrode arranged in the gate trench on the gate dielectric, and an electrically insulating cap arranged on the metal gate electrode and within the gate trench.