MEMS element with increased density
US11603312B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Dec 10, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0176
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A microelectromechanical device comprising a mobile rotor in a silicon wafer. The rotor comprises one or more high-density regions. The one or more high-density regions in the rotor comprise at least one high-density material which has a higher density than silicon. The one or more high-density regions have been formed in the silicon wafer by filling one or more fill trenches in the rotor with the at least one high-density material. The one or more fill trenches have a depth/width aspect ratio of at least 10, and the one or more fill trenches have been filled by depositing the high-density material into the fill trenches in an atomic layer deposition (ALD) process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.