Threshold switch structure and memory cell arrangement
US11605435B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2021 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Jul 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/76
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various aspects relate to a threshold switch structure and a use of such threshold switch structure as a threshold switch in a memory cell arrangement, the threshold switch structure including: a first electrode, a second electrode, a switch element in direct physical contact with the first electrode and the second electrode, the switch element including a layer of a spontaneously polarizable material. The first electrode, the second electrode, and the switch element are configured to allow for a switching of the switch element between a first electrical conductance state and a second electrical conductance state as a function of a voltage drop provided over the switch element by the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.