Packages with local high-density routing region embedded within an insulating layer
US11605595B2 · kind B2 · utility
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1References
50Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Oct 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an apparatus and methods for making same. The apparatus includes a first insulating layer, a first metal layer disposed on a surface of the first insulating layer, and a metallization structure embedded in the first insulating layer. The metallization structure occupies only a portion of a volume of the first insulating layer. The metallization structure has a line density greater than a line density of the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.